This work presents the fabrication and experimental demonstration of heterogeneously integrated photodetectors using monolayer WS₂, aimed at advancing ultra-thin optoelectronic devices. By employing silicon nitride wafers with SiN/SiO₂ layers, precise device patterning was achieved through electron beam lithography and dry etching, followed by the integration of WS₂ flakes using a wet etching technique. The study focused on the device's broadband transmission properties, observing a significant shift in the exciton absorption wavelength (~10 nm) due to strain introduced during the integration process. This shift highlights the potential for manipulating optical properties through strain engineering. The devices exhibited high spectral responsivities at the WS₂ exciton wavelength, demonstrating their efficacy in the visible spectrum. These findings pave the way for future on-chip photonic devices operating at visible wavelengths, with promising applications in strainoptronics and other advanced optoelectronic systems.
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