Poster + Paper
7 June 2024 Detection technology for photon energy below the Schottky barrier
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Conference Poster
Abstract
Previous research in infrared sensing mainly focused on narrow bandgap semiconductor materials, tunable bandgap two-dimensional (2D) materials. However, it is challenging to integrate them with silicon electronics due to lattice mismatch with silicon. To address this challenge, this work proposes a concept of infrared detection different from that of narrow bandgap semiconductors and 2D materials. In this study, thin metal/semiconductor Schottky devices were fabricated to realize mid-infrared light detection by collecting thermal signals generated by hot carriers with energy lower than the Schottky barrier. Experimental results demonstrate successful detection of mid-infrared light signals at wavelengths of 3.22 μm, 4.28 μm, and 4.83 μm, surpassing the cutoff wavelength corresponding to Schottky barrier. Such Schottky devices exhibit a maximum responsivity of 0.680 mA/W, which confirms their efficiency and application potential in application of mid-infrared optical detection.
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yao-Han Dong, Zih-Chun Su, Po-Hsien Chiang, and Ching-Fuh Lin "Detection technology for photon energy below the Schottky barrier", Proc. SPIE 13046, Infrared Technology and Applications L, 130461Z (7 June 2024); https://doi.org/10.1117/12.3013622
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KEYWORDS
Mid infrared

Photodetectors

Silicon

Signal detection

Infrared radiation

Hot carriers

Infrared detection

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