A variety of mid-, long - and very long– wavelength infrared (MWIR, LWIR and VLWIR) detectors and focal plane arrays utilizing InAs/InAsSb superlattices have been demonstrated in the last decade. At the same time, the transport properties of minority carriers in these structures became an area of active investigation after initial observations of hole localization at low temperatures attributed to the nonuniformity of superlattice layers thickness. In this work we studied the dependence of minority carrier (hole) transport, absorption coefficient and quantum efficiency (QE) of a 5.6 µm cut-off wavelength and of 8.9 µm cut-off wavelength LWIR InAs/InAsSb detectors on temperatures and applied bias. Next, we found the minority carrier (hole) diffusion length and mobility from the measured QE, absorption coefficient and minority carrier lifetime. These results are critical for understanding of the mechanisms of the hole transport in these photodetectors and will help improve device performance.
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