Advances in entangled-photon sources and single-photon avalanche diodes for quantum technologies in the SWIR

Frank Rutz; Thorsten Passow; Andreas Wörl; Raphael Müller; Quankui Yang; Vivienne Leidel; Andreas Bächle; Elke Diwo-Emmer; Jasmin Niemasz; Silvia Giudicatti; Volker Daumer; Robert Rehm

doi:10.1117/12.3013721

7 June 2024 Advances in entangled-photon sources and single-photon avalanche diodes for quantum technologies in the SWIR

Frank Rutz, Thorsten Passow, Andreas Wörl, Raphael Müller, Quankui Yang, Vivienne Leidel, Andreas Bächle, Elke Diwo-Emmer, Jasmin Niemasz, Silvia Giudicatti, Volker Daumer, Robert Rehm

Author Affiliations +

Proceedings Volume 13025, Advanced Photon Counting Techniques XVIII; 130250B (2024) https://doi.org/10.1117/12.3013721
Event: SPIE Defense + Commercial Sensing, 2024, National Harbor, Maryland, United States

Abstract

Quantum sensing and quantum communication systems rely on high-performance single- or entangled-photon sources and single-photon detectors enabling experiments based on the quantum nature of single photons. In this contribution, we discuss the development of an entangled-photon source delivering entangled photon pairs with wavelengths of about 1550 nm alongside with single-photon avalanche detectors (SPADs) for the short-wave infrared (SWIR) and for the extended SWIR (eSWIR) spectral range. The fabrication processes of such quantum-enabling technologies is highlighted. The entangled-photon source is based on AlGaAs Bragg-reflection waveguides. Very low difference in effective refractive index of TE and TM polarized photons – important for high polarization entanglement without external compensation – as well as high single and coincidence count rates were achieved. For the fabrication of InGaAs/InP SWIR SPADs, the key technology is the planar process technology via zinc diffusion to produce spatially confined p-type regions. For the zinc-diffusion process, a novel method of selective epitaxial overgrowth was developed, achieving the intended double-well diffusion profile. Experimental data of thus fabricated InGaAs/InP SPADs show the expected dark-current, photo-current, and multiplication-gain characteristics in linear-mode operation as well as breakthrough behavior in Geiger-mode operation at 240 K, which is a typical operating temperature for InGaAs/InP SPADs achievable by thermoelectric cooling. GaSb-based SPADs for the eSWIR are fabricated in a mesa approach showing the expected dark current behavior as well. All three different devices are linked by enabling quantum technologies in the (e)SWIR as well as by using our III/V-semiconductor technology facilities.

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Frank Rutz, Thorsten Passow, Andreas Wörl, Raphael Müller, Quankui Yang, Vivienne Leidel, Andreas Bächle, Elke Diwo-Emmer, Jasmin Niemasz, Silvia Giudicatti, Volker Daumer, and Robert Rehm "Advances in entangled-photon sources and single-photon avalanche diodes for quantum technologies in the SWIR", Proc. SPIE 13025, Advanced Photon Counting Techniques XVIII, 130250B (7 June 2024); https://doi.org/10.1117/12.3013721

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