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Perovskite materials have drawn significant attention due to their distinct characteristics and increasing optoelectronic applications. The triple cation (Cs/MA/FA) perovskite precursor solution is commonly synthesized using the conventional perovskite stirring method (CSM) regulated within a nitrogen glovebox. However, the process requires a significant amount of time for preparation and limits the fabrication conditions in an ambient environment, hence impeding their potential for large-scale applications and ambient environment stability. Here, a triple cation perovskite (Cs0.1(MA0.17FA0.83)0.9Pb(Br0.17I0.83)3) precursor solution was prepared using the microwave-assisted synthesis (MAS) method and fabricated as a perovskite transistor in a “fully-ambient air” environment. The stability of perovskite films was evaluated by measuring their optical properties and comparing the characteristics of MAS-perovskite solution to the conventional stirring method (CSM). The perovskite films made via MAS exhibited an anomalous shift towards shorter wavelengths and an increase in linewidth as the temperature increased, highlighting the distinctive characteristics of the triple cation perovskite that was produced. These results were later analyzed and fitted to investigate the induced lattice thermal expansion, structural phase transition, and electron phonon interactions that highlighted the enhanced crystal quality from the MAS-perovskite films. Aside from the seven-fold PL enhancements, the fabrication of MAS-perovskite transistors in a completely ambient environment resulted in a ten-fold increase in electron carrier mobility compared to the CSM-perovskite devices indicating a large improvement in the crystalline formation mechanism of MAS-perovskite materials. The success in preparing the ambient-fabricated is beneficial for pushing the large-scale and efficient optoelectronic devices.
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