Electron-phonon coupling and transient dynamics of hot carriers: from interpretation of photoemission experiments to transport simulations in devices

M. Ghanem; P. Dollfus; J. Saint-Martin; R. Sen; N. Vast; J. Sjakste

doi:10.1117/12.3022114

10 June 2024 Electron-phonon coupling and transient dynamics of hot carriers: from interpretation of photoemission experiments to transport simulations in devices

M. Ghanem, P. Dollfus, J. Saint-Martin, R. Sen, N. Vast, J. Sjakste

Author Affiliations +

Proceedings Volume 12992, Advances in Ultrafast Condensed Phase Physics IV; 1299207 (2024) https://doi.org/10.1117/12.3022114
Event: SPIE Photonics Europe, 2024, Strasbourg, France

Abstract

The progress in DFT-based description of the electron-phonon scattering allowed to describe the relaxation dynamics of hot or photoexcited electrons in several materials, in very good agreement with time-resolved spec- troscopy experiments [1-3]. As hot carriers also start to attract attention in the context of emerging concepts for energy conversion, here we present our first results related to the coupling of ab initio data with device-oriented Monte Carlo simulation methods [4]. We show that DFT-based description of the electron-phonon intervalley scattering in GaAs, coupled with stochastic Monte Carlo method, allows to describe the energy transfer from electrons to phonons in transient regime, in good agreement with previous time-resolved photoemission experiments. [1] J. Sjakste et al, J. Phys: Cond. Mat. 30, 353001 (2018). [2] Chen, Sjakste et al, PNAS 117, 21962-21967 (2020). [3] H. Tanimura et al, Phys. Rev. B 100, 035201 (2019). [4] R. Sen, N. Vast, J. Sjakste, Appl. Phys. Lett. 120, 082101 (2022).

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

M. Ghanem, P. Dollfus, J. Saint-Martin, R. Sen, N. Vast, and J. Sjakste "Electron-phonon coupling and transient dynamics of hot carriers: from interpretation of photoemission experiments to transport simulations in devices", Proc. SPIE 12992, Advances in Ultrafast Condensed Phase Physics IV, 1299207 (10 June 2024); https://doi.org/10.1117/12.3022114

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available