Negative differential transconductance in conventional heterojunction TFET

Yunhe Guan; Jiachen Lu; Zhen Dou; Haifeng Chen; Feng Liang

doi:10.1117/12.3016896

15 January 2024 Negative differential transconductance in conventional heterojunction TFET

Yunhe Guan, Jiachen Lu, Zhen Dou, Haifeng Chen, Feng Liang

Proceedings Volume 12983, Second International Conference on Electrical, Electronics, and Information Engineering (EEIE 2023); 129830D (2024) https://doi.org/10.1117/12.3016896
Event: Second International Conference on Electrical, Electronics, and Information Engineering (EEIE 2023), 2023, Wuhan, China

Abstract

The negative differential transconductance (NDT) or negative gate transconductance has been observed in conventional heterojunction TFET (HTFET) with gate/source alignment structure. The existence of band-offset in heterojunction should be responsible for NDT in this structure. The influences of source doping, drain bias, and dielectric constant of spacer on the NDT have been investigated in detail. It has shown that low source doping, small drain voltage and high dielectric constant of the spacer will strength the NDT phenomenon, which will low the maximum current of the device in the meantime. This means that there exits trade-off between the NDT feature and the performance in HTFET.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Yunhe Guan, Jiachen Lu, Zhen Dou, Haifeng Chen, and Feng Liang "Negative differential transconductance in conventional heterojunction TFET", Proc. SPIE 12983, Second International Conference on Electrical, Electronics, and Information Engineering (EEIE 2023), 129830D (15 January 2024); https://doi.org/10.1117/12.3016896

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