Paper
15 January 2024 Ultra-wideband 180° active digital phase-shifting unit design
Pujia Wu, Chengying Chen
Author Affiliations +
Proceedings Volume 12983, Second International Conference on Electrical, Electronics, and Information Engineering (EEIE 2023); 1298303 (2024) https://doi.org/10.1117/12.3016678
Event: Second International Conference on Electrical, Electronics, and Information Engineering (EEIE 2023), 2023, Wuhan, China
Abstract
In this paper, an ultra-wideband active phase shifter circuit structure based on GaAs pHEMT process is adopted to design a 180° phase shifting unit for a 4~18GHz ultra-wideband active CNC phase shifter. The design uses the topology of the active Balun circuit combined with the SPDT switch. The active Balun structure widens the operating band while compensating for the low-frequency insertion loss difference. The design also optimizes the insertion loss and area of the phase shifter by improving the switching circuit. Simulation results show that the 180° active phase shifter unit has an insertion loss range of 3.33 to 5.4dB, amplitude fluctuation of each state is less than 1.5dB, phase shift accuracy is 180±2.5°, input, and output return loss is less than 10dB, and chip area is 1.9mm*1.0mm.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Pujia Wu and Chengying Chen "Ultra-wideband 180° active digital phase-shifting unit design", Proc. SPIE 12983, Second International Conference on Electrical, Electronics, and Information Engineering (EEIE 2023), 1298303 (15 January 2024); https://doi.org/10.1117/12.3016678
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KEYWORDS
Phase shifts

Circuit switching

Design and modelling

Transistors

Single point diamond turning

Phase shifting

Signal attenuation

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