Paper
29 December 2023 Wafer defect extraction algorithm and analysis for TDI-based line scanning dark-field scattering
Author Affiliations +
Proceedings Volume 12976, Eighth Asia Pacific Conference on Optics Manufacture and Third International Forum of Young Scientists on Advanced Optical Manufacturing (APCOM and YSAOM 2023); 129761H (2023) https://doi.org/10.1117/12.3009286
Event: 8th Asia Pacific Conference on Optics Manufacture & 3rd International Forum of Young Scientists on Advanced Optical Manufacturing, 2023, Shenzhen, China
Abstract
In semiconductor manufacturing, wafer defect inspection is critical, both in front-end and back-end processes. Despite the presence of conventional techniques such as scanning electron microscopy (SEM), atomic force microscopy (AFM), and others for inspecting wafer surface defects, these techniques are not sufficient to meet the urgent demands of in-line inspection for wafer fabs. This paper introduces a new method to fast inspect wafer defects utilizing dark-field scattering in conjunction with time delay integration (TDI). In addition, a wafer surface defect extraction algorithm is designed for this method. The comparison of the postprocessing results with images captured by digital microscopy shows that the algorithm can effectively reduce the influence of column fixed pattern noise (CFPN) on the subsequent defect enhancement and can extract the defect signal from the background noise. This method provides a more targeted reference for wafer surface defect inspection and has important application potential in semiconductor manufacturing.
(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Fei Yu, Min Xu, and Junhua Wang "Wafer defect extraction algorithm and analysis for TDI-based line scanning dark-field scattering", Proc. SPIE 12976, Eighth Asia Pacific Conference on Optics Manufacture and Third International Forum of Young Scientists on Advanced Optical Manufacturing (APCOM and YSAOM 2023), 129761H (29 December 2023); https://doi.org/10.1117/12.3009286
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KEYWORDS
Semiconducting wafers

Image sensors

Defect inspection

Background noise

Inspection

Signal to noise ratio

Wafer inspection

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