Studies on resolution with ZEP530A for EUV mask

Akihide Shirotori; Takashi Tsutsumi; Sin Fu Yeh; Kenji Kuroyanagi

doi:10.1117/12.3010109

9 April 2024 Studies on resolution with ZEP530A for EUV mask

Akihide Shirotori, Takashi Tsutsumi, Sin Fu Yeh, Kenji Kuroyanagi

Proceedings Volume 12956, Novel Patterning Technologies 2024; 129560U (2024) https://doi.org/10.1117/12.3010109
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Conference Poster

Abstract

In this work, Zeon introduces the resolution with ZEP530A without PFAS restriction for dense L/S, iso-space and iso-line patterns on Si wafer by F7000S with VSB type in EB drawing equipment. Zeon examined litho-performance at dense L/S in changing 3 kinds of developers. The new developer of ZED-K90 (R&D sample) with lower both viscosity and solubility enabled to get lower roughness and enhance the resolution than those of ZED-N60 and N70 on LER although the dose to size was getting higher. There were some pinching defects on the patterns by ZED-N60 due to too strong solubility. On the other hand, ZED-N70 and K90 can be less on them due to the appropriate solubility. Next, litho-performance with ZEDK90 at iso-space and iso-line patterns was evaluated. The resolution was at design CD18nm in iso-line pattern and at design CD12nm in iso-space pattern and it was the best resolution among 3 developers. Additionally, the LER and SER with ZED-90 got lower than those with ZED-N70. It was clarified that the combination of ZEP530A and ZED-N90 had the sufficient potential to both enhance litho-performance including the resolution in EB resists and utilize them for EUV mask.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Akihide Shirotori, Takashi Tsutsumi, Sin Fu Yeh, and Kenji Kuroyanagi "Studies on resolution with ZEP530A for EUV mask", Proc. SPIE 12956, Novel Patterning Technologies 2024, 129560U (9 April 2024); https://doi.org/10.1117/12.3010109

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