Simulating SEM imaging of via bottoms

Benjamin D. Bunday; Chris Mack; Shari Klotzkin; Douglas Patriarche; Yvette Ball

doi:10.1117/12.3012881

9 April 2024 Simulating SEM imaging of via bottoms

Benjamin D. Bunday, Chris Mack, Shari Klotzkin, Douglas Patriarche, Yvette Ball

Proceedings Volume 12955, Metrology, Inspection, and Process Control XXXVIII; 129551T (2024) https://doi.org/10.1117/12.3012881
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Abstract

Scanning electron microscope (SEM) imaging is widely used in semiconductor manufacturing, including for defect inspection. One use is to identify contact holes that are potentially scummed (not completely cleared to the substrate). However, the visibility of the bottom of a contact hole (and thus the ability to identify scumming) is limited when the aspect ratio of the hole becomes high. In this work, a large designed experiment simulation study using AMAG SimuSEM will thoroughly explore the parametric influences of profile and CD for via bottom detection in the secondary electron regime, including not only aspect ratio, but also influences of sidewall angle and footing, along with defect cases of incomplete etch or resist residues in hole bottoms. We will show the expected trends to the signal evolution as a function of the applied perturbations, and demonstrate that simulation can be used to understand and estimate the thresholds for detecting via footing and scumming.

Conference Presentation

Citation Download Citation

Benjamin D. Bunday, Chris Mack, Shari Klotzkin, Douglas Patriarche, and Yvette Ball "Simulating SEM imaging of via bottoms", Proc. SPIE 12955, Metrology, Inspection, and Process Control XXXVIII, 129551T (9 April 2024); https://doi.org/10.1117/12.3012881

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