Nonlinear regulation on silicon photonic chips based on Sb2Se3 thin films

Maohui Li; Li’ao Ye; Haoran Ma; Zichao Zhao; Yuehai Wang; Jianyi Yang

doi:10.1117/12.2688186

6 November 2023 Nonlinear regulation on silicon photonic chips based on Sb₂Se₃ thin films

Maohui Li, Li’ao Ye, Haoran Ma, Zichao Zhao, Yuehai Wang, Jianyi Yang

Proceedings Volume 12921, Third International Computing Imaging Conference (CITA 2023); 1292114 (2023) https://doi.org/10.1117/12.2688186
Event: Third International Computing Imaging Conference (CITA 2023), 2023, Sydney, Australia

Abstract

With the continuous development of silicon-based optoelectronic chips, their high-power applications in communication, ranging, and other fields are gradually increasing. However, the nonlinear effects of silicon (Si) cause significant output power loss when the input optical power surpasses a certain threshold. This nonlinear relationship between the input optical power and the chip's output power reduces its working performance. Therefore, the importance of regulating the nonlinear phenomena of the chip gradually becomes prominent. In this regard, Sb₂Se₃ is an excellent material. We propose a scheme to improve the nonlinear power threshold by depositing crystalline Sb₂Se₃ (c-Sb₂Se₃) on the top of Si waveguides. Noted that optical loss caused by nonlinear absorption can be depressed by the c-Sb₂Se₃ film, as well as loss compensation is proportional to the length of the c-Sb₂Se₃ film deposited. This article theoretically analyzes the characteristics of Sb₂Se₃, which material can compensate for the nonlinear effect of Si during high-power operation of Si chips. This compensation increases the optical power threshold of nonlinear excitation and is nonvolatile. C-Sb₂Se₃ films with different lengths (from 15 μm to 60 μm) were deposited on Si waveguides and Si microring resonators with different coupling gap (from 0.2 μm to 0.35 μm) respectively. The results demonstrate a significant improvement in the device's optical nonlinear power threshold. Furthermore, as the length of the c-Sb₂Se₃ film increases, the optical nonlinear power threshold increases more significantly.

Citation Download Citation

Maohui Li, Li’ao Ye, Haoran Ma, Zichao Zhao, Yuehai Wang, and Jianyi Yang "Nonlinear regulation on silicon photonic chips based on Sb₂Se₃ thin films", Proc. SPIE 12921, Third International Computing Imaging Conference (CITA 2023), 1292114 (6 November 2023); https://doi.org/10.1117/12.2688186

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KEYWORDS

Silicon

Waveguides

Nonlinear optics

Antimony

Crystals

Absorption

Silicon photonics

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