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Modern optical gas detection systems utilize the technique of tunable laser absorption spectroscopy for different applications in science, manufacture, or medicine. Superlattice structures composed of semiconductors from the 6.1 Å family enable type-II band alignments and have the potential to exceed state of the art figure of merits of widely used infrared detectors. In this study, InAs/GaSb and InAs/InAsSb type-II superlattices were grown using molecular beam epitaxy and characterized using Fourier-transform infrared spectroscopy and pump-probe transient absorption technique. Photoluminescence spectra were obtained for all samples in 10 to 300K temperature range and then complemented with photoreflectance measurements for characteristic temperatures to increase the sensitivity of the measurement for less optically active transitions. In addition, pump-probe measurements were performed to investigate the dynamics of carrier relaxation and recombination processes in proximity of transition energies observed in previous experiments.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Michal Rygała,Andreas Bader,Tristan Smołka,Krzysztof Ryczko,Fabian Hartmann,Grzegorz Sęk,Sven Höfling, andMarcin Motyka
"Ultrafast infrared spectroscopy of InAs/GaSb and InAs/InAsSb type-II superlattices", Proc. SPIE 12895, Quantum Sensing and Nano Electronics and Photonics XX, 128950L (8 March 2024); https://doi.org/10.1117/12.3001645
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Michal Rygała, Andreas Bader, Tristan Smołka, Krzysztof Ryczko, Fabian Hartmann, Grzegorz Sęk, Sven Höfling, Marcin Motyka, "Ultrafast infrared spectroscopy of InAs/GaSb and InAs/InAsSb type-II superlattices," Proc. SPIE 12895, Quantum Sensing and Nano Electronics and Photonics XX, 128950L (8 March 2024); https://doi.org/10.1117/12.3001645