Due to their tunable bandgap, compound semiconductors have become the primary materials for synthesizing infrared (IR) photodetectors. However, the manufacturing processes for most compound semiconductors are costly and energyintensive. Therefore, developing a low-cost, low-energy, and silicon-compatible IR photodetector is worthwhile. Here, we create an inverted pyramid structure (IPS) for Ag/n-Si photodetector and utilize its structure to enhance localized surface plasmon resonance (LSPR). A thick metal surface makes the hot carriers take a long time to pass through, while the short lifetime of the hot carriers leads to their decay before reaching the destination. Thus thick metal could result in degraded signals. However, examination of the response from the mid-infrared light at 4.26 μm, the 10nm-Ag/n-Si Schottky photodetectors show that the device with a thickness of 14 nm has a 2.6 times improvement in response compared to devices with a thickness of 10 nm, and the signal-to-noise ratio (SNR) increased by 3.6 times. Based on the results of scanning electron microscopy (SEM), the hot carrier effect and the variation of optical response intensity are found to depend highly on the space and size of nanoparticles (NPs). As a result, LSPR enhances light absorption and improves the optical response.
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