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We present a non-intuitive but still practically implementable silicon meta-atom with strong electrical tunability. We used topological optimization on a 20×20-variable silicon-on-insulator grid and achieved tunability by using JRD1, a stable electrooptic polymer. The electric potential is applied on two ITO electrodes, and a peak shift of 0.6 nm V−1 is achieved in the optical communication E and S bands. The proposed device can be regarded as a demultiplexer or channel selector on a coarse wavelength-division-multiplexing system, with an extinction ratio between adjacent channels of ∼14 dB.
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(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
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Ruth E. Rubio-Noriega, Franck Soria-Pinedo, Mark Clemente-Arenas, Julio V. Urbina, Akhlesh Lakhtakia, Hugo E. Hernandez-Figueroa, "Topological optimization of electrically tunable silicon-organic metasurfaces," Proc. SPIE 12890, Smart Photonic and Optoelectronic Integrated Circuits 2024, 128900H (8 March 2024); https://doi.org/10.1117/12.3005180