Scandium-doped aluminum nitride photonic integration platform

Nanxi Li; Wing Wai Chung; Jia Sheng Goh; Yat Fung Tsang; Landobasa Y. M. Tobing; Chong Pei Ho; Binni Varghese; Leh Woon Lim; Minghua Li; Huamao Lin; Qingxin Zhang; Doris K. T. Ng; Lennon Y. T. Lee; Xianshu Luo

doi:10.1117/12.3004598

12 March 2024 Scandium-doped aluminum nitride photonic integration platform

Nanxi Li, Wing Wai Chung, Jia Sheng Goh, Yat Fung Tsang, Landobasa Y. M. Tobing, Chong Pei Ho, Binni Varghese, Leh Woon Lim, Minghua Li, Huamao Lin, Qingxin Zhang, Doris K. T. Ng, Lennon Y. T. Lee, Xianshu Luo

Author Affiliations +

Proceedings Volume 12889, Integrated Optics: Devices, Materials, and Technologies XXVIII; 128890D (2024) https://doi.org/10.1117/12.3004598
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

Aluminum nitride (AlN) is a promising photonics material contributed by its wide transparency window and remarkable nonlinear optical property. Moreover, its nonlinear effect can be further enhanced by doping Scandium (Sc). Such nonlinear optical property brings potential for high efficiency in nonlinear optical generation processes, such as 2nd harmonic generation and frequency comb generation. Although the nonlinear optical property of Sc-doped AlN looks promising, its waveguide is facing challenge on loss reduction. In this work, we report Sc-doped AlN photonic integrated circuit with reduced waveguide loss of 6 dB/cm around 1550 nm. The waveguide has Sc doping concentration of 10%. Its etching process is tailored through a design of experiment (DoE) approach to achieve smooth surface. An annealing process is also applied to patterned waveguide for optical loss reduction. A loaded Q of 1.41×10⁴ has also been reported from microring resonator on the same wafer. The reported result paves the way towards low-loss Sc-doped AlN for photonic integrated circuits.

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(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Nanxi Li, Wing Wai Chung, Jia Sheng Goh, Yat Fung Tsang, Landobasa Y. M. Tobing, Chong Pei Ho, Binni Varghese, Leh Woon Lim, Minghua Li, Huamao Lin, Qingxin Zhang, Doris K. T. Ng, Lennon Y. T. Lee, and Xianshu Luo "Scandium-doped aluminum nitride photonic integration platform", Proc. SPIE 12889, Integrated Optics: Devices, Materials, and Technologies XXVIII, 128890D (12 March 2024); https://doi.org/10.1117/12.3004598

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