Scaling of MESFETs and HEMTs at 0.1-um gate length

Niru V. Dandekar; Douglas Jon Burrows; Joseph W. Manning

doi:10.1117/12.20924

1 August 1990 Scaling of MESFETs and HEMTs at 0.1-um gate length

Niru V. Dandekar, Douglas Jon Burrows, Joseph W. Manning

Proceedings Volume 1288, High-Speed Electronics and Device Scaling; (1990) https://doi.org/10.1117/12.20924
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

A novel adaption of the mushroom gate structure has been realized and exhibited in MESFET as well as HEMT devices. The gate structure has a serrated appearance, and it realizes low input capacitance, in addition to the low resistance achievable using a conventional approach. At gate lengths below 0.15 micron, the device structure assumes a qualitatively different form, requiring a reassessment of the scaling rules. Initial results on working devices are presented.

Citation Download Citation

Niru V. Dandekar, Douglas Jon Burrows, and Joseph W. Manning "Scaling of MESFETs and HEMTs at 0.1-um gate length", Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); https://doi.org/10.1117/12.20924

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