Paper
1 August 1990 Evidence for new optical transitions in short-period Si/Ge superlattices from electron-beam electroreflectance measurements
Michael A. Gell, Michael H. Herman, Kimberley Elcess, I. Dd. Ward, C. J. Gibbings, C. G. Tuppen
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Proceedings Volume 1286, Modulation Spectroscopy; (1990) https://doi.org/10.1117/12.20861
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
An electroreflectance study of several short-period Si/Ge superlattices and SiGe alloy layers grown by molecular beam epitaxy has been performed. Contactless Electron Beam Electroreflectance (EBER) measurements taken at 120K provide clear evidence of superlattice transitions. Comparisons between EBER spectra from sequentially stripped samples reveal superlattice transitions accompanied by those related to the substrate material and buffer layers. Results from the EBER measurements are compared with predictions from empirical pseudopotential calculations. The experimental features support the theoretical predictions.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael A. Gell, Michael H. Herman, Kimberley Elcess, I. Dd. Ward, C. J. Gibbings, and C. G. Tuppen "Evidence for new optical transitions in short-period Si/Ge superlattices from electron-beam electroreflectance measurements", Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); https://doi.org/10.1117/12.20861
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Cited by 3 scholarly publications.
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KEYWORDS
Superlattices

Silicon

Germanium

Modulation

Spectroscopy

Fabry–Perot interferometers

Electron beams

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