Presentation + Paper
12 March 2024 High-sensitivity 648x484-pixel CMOS image sensor for wide-field FLIM with four simultaneous time gates
Author Affiliations +
Abstract
We report wide-field time-domain fluorescence lifetime imaging (TD-FLIM) using a high-photosensitivity 648x484- pixel time-resolved CMOS image sensor with four simultaneous time gates. The advantages of this image sensor are high spatial resolution, high quantum efficiency and high photon rate. In this report, we verified the applicability of a 648x484-pixel range imaging sensor developed in our laboratory for FLIM. In the measurements, four time-resolved images are obtained simultaneously. To improve the temporal sampling resolution, sub sampling is performed. The performance was compared with that of our previously developed 128x128-pixel TD-FLIM CMOS image sensor. The data was analyzed by the phasor method at 20MHz. The measured average fluorescence lifetimes for the new and previous sensors were 8.52 ns and 8.26 ns, and the standard deviations were 0.74 ns and 0.56 ns, respectively. We have achieved higher signal-to-noise ratios as well as high spatial resolution. Finally, this image sensor was used to perform two-dimensional imaging of the fluorescence lifetime of fluorescent acrylic plates.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Ibuki Ando, Kamel Mars, Keita Yasutomi, Shoji Kawahito, and Keiichiro Kagawa "High-sensitivity 648x484-pixel CMOS image sensor for wide-field FLIM with four simultaneous time gates", Proc. SPIE 12836, Optical Biopsy XXII: Toward Real-Time Spectroscopic Imaging and Diagnosis, 1283605 (12 March 2024); https://doi.org/10.1117/12.3002329
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KEYWORDS
Fluorescence lifetime imaging

Fluorescence

CMOS sensors

Image sensors

Copper indium disulfide

LIDAR

Modulators

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