Preparation of ITO/p-Si heterojunction on PI substrate by magnetron sputtering

Lixuan Li; Zhenhua He; Jixiang Xu

doi:10.1117/12.3004542

16 August 2023 Preparation of ITO/p-Si heterojunction on PI substrate by magnetron sputtering

Lixuan Li, Zhenhua He, Jixiang Xu

Proceedings Volume 12787, Sixth International Conference on Advanced Electronic Materials, Computers, and Software Engineering (AEMCSE 2023); 1278706 (2023) https://doi.org/10.1117/12.3004542
Event: 6th International Conference on Advanced Electronic Materials, Computers and Software Engineering (AEMCSE 2023), 2023, Shenyang, China

Abstract

This paper presents the preparation of an ITO/p-Si heterojunction on a polyimide (PI) substrate using magnetron sputtering. The microstructure and optoelectronic properties of the heterojunction were characterized using field emission scanning electron microscopy, X-ray photoelectron spectroscopy, four-probe testing, digital source meter, multimeter, UV-visible spectrophotometer, and laser confocal micro-Raman spectroscopy. Experimental results showed that the heterojunction has a resistivity of 0.82 Ω·cm and exhibits MOS capacitance characteristics in its IV curve. The heterojunction has good optical properties, with its strongest absorption occurring in the UV region at 221 nm. Under excitation by a 325 nm laser, the heterojunction exhibits an emission peak at both 586 nm and 632 nm.

(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Lixuan Li, Zhenhua He, and Jixiang Xu "Preparation of ITO/p-Si heterojunction on PI substrate by magnetron sputtering", Proc. SPIE 12787, Sixth International Conference on Advanced Electronic Materials, Computers, and Software Engineering (AEMCSE 2023), 1278706 (16 August 2023); https://doi.org/10.1117/12.3004542

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