Structure optimization design based on 4h-SiC MOS tube

Zhengjie Cui; Wei Li

doi:10.1117/12.2686685

6 August 2023 Structure optimization design based on 4h-SiC MOS tube

Zhengjie Cui, Wei Li

Proceedings Volume 12781, International Conference on Optoelectronic Information and Functional Materials (OIFM 2023); 127813K (2023) https://doi.org/10.1117/12.2686685
Event: 2023 International Conference on Optoelectronic Information and Functional Materials (OIFM 2023), 2023, Guangzhou, JS, China

Abstract

SiC materials are widely used in high-frequency, high-voltage and high-temperature scenarios in modern society, especially in power electronics applications, due to their excellent characteristics such as high thermal conductivity, high breakdown electric field, wide band gap and high electron saturation rate. It’s excellent material properties. But SiC MOSFET(Metal Oxide Semiconductor Field Effect Transistor) still has some defects that affect its performance: For example, the gate oxide layer is prone to breakdown, bipolar degradation effect is prone to occur, and device power consumption has to be optimized. This article discusses the structure optimization route of MOSFET based on 4h-SiC material, including adding P-shielding layer, double gate trench, P well double epitaxy, heterojunction, compound gate, semi-super junction and other structures in the new structure design of SiC MOSFET to optimize its characteristics.

Citation Download Citation

Zhengjie Cui and Wei Li "Structure optimization design based on 4h-SiC MOS tube", Proc. SPIE 12781, International Conference on Optoelectronic Information and Functional Materials (OIFM 2023), 127813K (6 August 2023); https://doi.org/10.1117/12.2686685

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