Design of InGaAs p-i-n photo-detectors prepared on misoriented Si substrates

Guosheng Wang; Zungui Ke; Mengqi Yao; Qian Dai; Ruiyu Yang; Xu Pan; Xiumin Xie

doi:10.1117/12.2686934

6 August 2023 Design of InGaAs p-i-n photo-detectors prepared on misoriented Si substrates

Guosheng Wang, Zungui Ke, Mengqi Yao, Qian Dai, Ruiyu Yang, Xu Pan, Xiumin Xie

Proceedings Volume 12781, International Conference on Optoelectronic Information and Functional Materials (OIFM 2023); 127810W (2023) https://doi.org/10.1117/12.2686934
Event: 2023 International Conference on Optoelectronic Information and Functional Materials (OIFM 2023), 2023, Guangzhou, JS, China

Abstract

InGaAs-based p-i-n Photo-Detectors (PDs) on misoriented Si and conventional Si substrates are both designed, fabricated, and characterized. It is found that the as-grown PD structure on misoriented Si substrate has lower dislocation density than on conventional Si substrate. The PD fabricated on misoriented Si substrate shows a low dark-current of 83nA under −5 V, a zero bias voltage responsivity of 0.58 A/W at 1550 nm, the corresponding quantum efficiency is 46%. The dark-current and quantum efficiency at 1550 nm, of the PD on misoriented Si substrate, is about over one orders of magnitude lower and 70% higher respectively, than the comparison PD fabricated on conventional Si substrate.

Citation Download Citation

Guosheng Wang, Zungui Ke, Mengqi Yao, Qian Dai, Ruiyu Yang, Xu Pan, and Xiumin Xie "Design of InGaAs p-i-n photo-detectors prepared on misoriented Si substrates", Proc. SPIE 12781, International Conference on Optoelectronic Information and Functional Materials (OIFM 2023), 127810W (6 August 2023); https://doi.org/10.1117/12.2686934

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