Paper
1 June 1990 Phase-shifting mask and FLEX method for advanced photolithography
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Abstract
Practical resolution the minimum feature size with a depth of focus (DOF) required for LSI fabrication process is analysed. Analysis is based on the calculated optical image characteristics and experimentally obtained image quality criterion for pattern delineation. It is found that practical resolution is not improved but may even be degraded with increasing NA and/or shortening wavelength. This means that the high resolution capability of advanced optical systems cannot be effectively utilized in actual fabrication of future LSIs if conventional optical lithography is used. To overcome this limitation the effectiveness of advanced image formation techniques the phaseshifting method and the FLEX method are investigated. It is shown that these techniques make it possible to overcome the limitations of conventional optical lithography. 1.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroshi Fukuda, Akira Imai, and Shinji Okazaki "Phase-shifting mask and FLEX method for advanced photolithography", Proc. SPIE 1264, Optical/Laser Microlithography III, (1 June 1990); https://doi.org/10.1117/12.20176
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CITATIONS
Cited by 10 scholarly publications and 11 patents.
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KEYWORDS
Phase shifts

Photoresist processing

Image processing

Optical lithography

Image quality

Excimer lasers

Image acquisition

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