Silylation and dry development of three component resists for half-micron lithography

Thierry G. Vachette; Patrick Jean Paniez; Michel Madore

doi:10.1117/12.20120

1 June 1990 Silylation and dry development of three component resists for half-micron lithography

Thierry G. Vachette, Patrick Jean Paniez, Michel Madore

Proceedings Volume 1262, Advances in Resist Technology and Processing VII; (1990) https://doi.org/10.1117/12.20120
Event: Microlithography '90, 1990, San Jose, CA, United States

Abstract

The study of the SAL 601 shows that E-Beam exposure induces selectivity in the diffusion of silylating agents. Two different mechanisms are responsible for silicon incorporation. The HMDS diffusion and reaction in the novolak matrix have been studied as a function of the thermal properties of the polymer. Two main silylation processes have been found by the modification of silicon incorporation mechanisms versus the silylation temperature. Different silylation tools and etchers have been tested in order to achieve correct patterns. Mask formation and grass phenomena have been studied and a model with aggregates formation has been developed. Silicon incorporation into the three different component resists has been studied versus the main silylation parameters. Submicron patterns have been achieved for different processes. This paper demonstrates that three component resists can be silylated by the use of different silylation processes and are good candidates for half-micron lithography.

Citation Download Citation

Thierry G. Vachette, Patrick Jean Paniez, and Michel Madore "Silylation and dry development of three component resists for half-micron lithography", Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); https://doi.org/10.1117/12.20120

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