Carrier transport modulation in InGaN/GaN multi quantum wells using polarization engineering for high-performance visible-light photodetection

Zesheng Lv; Yezhang Fang; Haoming Xu; Hao Jiang

doi:10.1117/12.2666866

4 April 2023 Carrier transport modulation in InGaN/GaN multi quantum wells using polarization engineering for high-performance visible-light photodetection

Zesheng Lv, Yezhang Fang, Haoming Xu, Hao Jiang

Author Affiliations +

Proceedings Volume 12617, Ninth Symposium on Novel Photoelectronic Detection Technology and Applications; 126177O (2023) https://doi.org/10.1117/12.2666866
Event: 9th Symposium on Novel Photoelectronic Detection Technology and Applications (NDTA 2022), 2022, Hefei, China

Abstract

p-i-n photodiodes using InGaN/GaN Multi Quantum Well (MQW) active layers are attracting increasing interest for their advantages in quantum efficiency and spectral response cutoff. However, the key performances, sensitivity and response speed of current InGaN/GaN photodiodes are seriously limited by the strong polarization of Ⅲ-nitrides, which severely hinder the transports of photogenerated carriers. In this work, polarization engineering is utilized to modulate the carrier transport in InGaN/GaN photodiodes, aiming to improve the collection of photogenerated carriers, introduce photoconductive gain and regulate the spectral responses. Different from the traditional p-up structure using Mg-doped p-layer, p-down n-i-p photodiodes were fabricated by introducing polarization induced p-type layer without any foreign acceptors. Thus, the polarization electric fields in InGaN quantum wells were modulated to be aligned with the built-in field of the junction, leading to enhanced separation and collection of the photogenerated carriers. What’s more, the aligned electric fields caused higher escape probability of electrons and lead to the remains of holes in the QWs. As a result, the minority lifetime (τ) can exceed the transmit time of electrons (t) and bring photoconductive gain without defects involving. Benefitted from the aligned electric fields and the photoconductive gain, the fabricated n-i-p structure achieved a record high responsivity of 0.56 A/W in InGaN/GaN photodiodes, meanwhile exhibited a pretty high speed of 41 ns rising time.

Citation Download Citation

Zesheng Lv, Yezhang Fang, Haoming Xu, and Hao Jiang "Carrier transport modulation in InGaN/GaN multi quantum wells using polarization engineering for high-performance visible-light photodetection", Proc. SPIE 12617, Ninth Symposium on Novel Photoelectronic Detection Technology and Applications, 126177O (4 April 2023); https://doi.org/10.1117/12.2666866

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KEYWORDS

Polarization

Quantum wells

Electrons

Photodiodes

Modulation

Indium gallium nitride

Electric fields

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