Fabrication and characteristics on gallium nitride-based ultraviolet photodetectors for i-line lithography machines

Fan Yang; Jintong Xu; Fucheng Yang; Ling Wang; Junbo Liu; Xiangyang Li

doi:10.1117/12.2666637

4 April 2023 Fabrication and characteristics on gallium nitride-based ultraviolet photodetectors for i-line lithography machines

Fan Yang, Jintong Xu, Fucheng Yang, Ling Wang, Junbo Liu, Xiangyang Li

Author Affiliations +

Proceedings Volume 12617, Ninth Symposium on Novel Photoelectronic Detection Technology and Applications; 1261760 (2023) https://doi.org/10.1117/12.2666637
Event: Ninth Symposium on Novel Photoelectronic Detection Technology and Applications (NDTA 2022), 2022, Hefei, China

Abstract

GaN p-i-n ultraviolet photodetector for i-line lithography machines were fabricated. GaN detectors are excellent choice to monitor the uniformity and change degree of the beam energy for their high sensitivity, low noise and strong radiation resistance. The detector had four pairs of pixels distributed like four-quadrant and one pair in the center. Each pair is combined with one unfold pixel and the other is completely shaded, which is intend for the differential measurement circuit to improve the signal-to-noise ratio. A detection grating made by mask were directly mount on the surface of detectors. The UV detector had a current responsivity over 0.06A/W at 365nm and no response at longer than 400 nm. Under dark conditions, a low leakage current density of below 1.0×10^-9A/cm² was achieved at reverse bias of 0.3 V. The detector responsibility linearity was measured. The detection energy resolution can reach 0.16µW/cm². The detectors were used for the light intensity calibration in optical proximity correction (OPC) to reduce the Rayleigh criterion k-factor. The combination of detectors and grating improved the measurement speed and edge measurement accuracy by using array slits detection (the grating of mask) and surface scanning method in focusing and leveling measurement system.

Citation Download Citation

Fan Yang, Jintong Xu, Fucheng Yang, Ling Wang, Junbo Liu, and Xiangyang Li "Fabrication and characteristics on gallium nitride-based ultraviolet photodetectors for i-line lithography machines", Proc. SPIE 12617, Ninth Symposium on Novel Photoelectronic Detection Technology and Applications, 1261760 (4 April 2023); https://doi.org/10.1117/12.2666637

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KEYWORDS

Gallium nitride

Lithography

Ultraviolet radiation

Dark current

Photodetectors

Ultraviolet detectors

Light sources

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