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4 April 2023 Band structures of curved quantum well calculated by k·p method
Jiushuang Zhang, Libing Jin, Weidong Lv, Shengwen Xie, Ruiqing Chai, Xuguang Deng, Yunfei Xu, Yuxiang Liu, Ji Zhou, Xin Chen
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Proceedings Volume 12617, Ninth Symposium on Novel Photoelectronic Detection Technology and Applications; 1261751 (2023) https://doi.org/10.1117/12.2666430
Event: 9th Symposium on Novel Photoelectronic Detection Technology and Applications (NDTA 2022), 2022, Hefei, China
Abstract
In this paper, the band structures of curved InGaAs/InP Quantum Well (QW) are investigated using the 8-band k·p method. The theoretical model adopts both the Luttinger-Kohn Hamiltonian considering spin-orbit interaction and 2- degenerated band, and the Pikus-Bir Hamiltonian for strained semiconductor. The Schrödinger equation is solved by Finite-Difference Method (FDM). It is found that band edges are inclined caused by the linearly distributed strain along z- direction of the curved QW, and the tilt direction is opposite under tension and compression. Within the material fracture limit, this strain field which is similar to the application of external electric field, can induce a variation in the band gap.
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Jiushuang Zhang, Libing Jin, Weidong Lv, Shengwen Xie, Ruiqing Chai, Xuguang Deng, Yunfei Xu, Yuxiang Liu, Ji Zhou, and Xin Chen "Band structures of curved quantum well calculated by k·p method", Proc. SPIE 12617, Ninth Symposium on Novel Photoelectronic Detection Technology and Applications, 1261751 (4 April 2023); https://doi.org/10.1117/12.2666430
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KEYWORDS
Quantum wells
Semiconductors
Finite difference methods
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