Paper
4 April 2023 Simulation of the charge collection characteristics of the 4H-SiC PIN fast neutron detector with TCAD
Yanli Xiong, Shuhuan Liu, Xuan Wang, Yong Ma, Fanjun Meng, Haodi Li, Youjun Huang, Heng Yu
Author Affiliations +
Proceedings Volume 12617, Ninth Symposium on Novel Photoelectronic Detection Technology and Applications; 1261709 (2023) https://doi.org/10.1117/12.2662918
Event: 9th Symposium on Novel Photoelectronic Detection Technology and Applications (NDTA 2022), 2022, Hefei, China
Abstract
For evaluating the charge collection characteristics of 4H-SiC PiN detector in fast neutron detection based on recoil proton method, the energy spectrum the scattering angle θ of the recoil protons produced by 241Am-Be neutron irradiation on fast neutron converter (polyethylene) were simulated with Geant4 toolkit. The energy range of the recoil protons simulated is covered 0~10MeV with the scattering angle varied within 0~60°. The simulation results proved that the higher proton energy, the smaller the corresponding scattering angles based on the physical mechanism of neutron elastic scattering interaction with converter material. The charge collection characteristics of 4H-SiC detector were numerically simulated with TCAD based on Geant4 simulation results by sampling the recoil proton energy and scattering angle (E, θ) as the input parameters. The detector charge collection characteristics changed with the recoil proton energy E (or the corresponding LET value), the scattering angle θ and the proton incident positions on the detector were compared and analyzed.
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yanli Xiong, Shuhuan Liu, Xuan Wang, Yong Ma, Fanjun Meng, Haodi Li, Youjun Huang, and Heng Yu "Simulation of the charge collection characteristics of the 4H-SiC PIN fast neutron detector with TCAD", Proc. SPIE 12617, Ninth Symposium on Novel Photoelectronic Detection Technology and Applications, 1261709 (4 April 2023); https://doi.org/10.1117/12.2662918
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KEYWORDS
Silicon carbide

TCAD

Monte Carlo methods

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