Paper
1 June 1990 In-situ develop end point control to eliminate CD variance
Mariste Jaffe
Author Affiliations +
Abstract
Photolithography variables that are still uncontrolled include time between softbake and exposure, time between exposure and develop, relative humidity, and exhaust uniformity. Even if all other variables are in perfect control, these can cause enough variation to put sub-micron CDs out of spec. Changing exposure energies cannot fully compensate. The use of in-situ develop end point control can eliminate CD variance caused by these and other process variations.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mariste Jaffe "In-situ develop end point control to eliminate CD variance", Proc. SPIE 1261, Integrated Circuit Metrology, Inspection, and Process Control IV, (1 June 1990); https://doi.org/10.1117/12.20082
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Semiconducting wafers

Process control

Photoresist developing

Optical lithography

Photoresist materials

Humidity

Critical dimension metrology

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