Paper
1 June 1990 Analysis of film reflectivity and its impact on photolithographic processing
Daniel Claire Baker, Gloria Johnson, Randall P. Bane
Author Affiliations +
Abstract
Submicron photolithographic processes present significant manufacturing challenges due to the relatively small process windows often found with these technologies. Small upstream variations in the pre-expose portion of the photomodule or subtle radial variations in the imaged layers reflectivity can result in final critical dimensions which are outside of the desired specification. One important parameter which has been found to significantly impact the final critical dimension is film reflectivity. This parameter is difficult to control and is a function of the optical characteristics of the layer being imaged, its thickness, and the resist thickness. In our process, improved poly silicon CD control was sought for a 0.8 jim process. Resist and poly thickness were investigated and optimal thicknesses determined. Poly CD control improved as a direct result of this optimization process.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Daniel Claire Baker, Gloria Johnson, and Randall P. Bane "Analysis of film reflectivity and its impact on photolithographic processing", Proc. SPIE 1261, Integrated Circuit Metrology, Inspection, and Process Control IV, (1 June 1990); https://doi.org/10.1117/12.20074
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Cited by 1 scholarly publication.
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KEYWORDS
Reflectivity

Semiconducting wafers

Metrology

Critical dimension metrology

Process control

Inspection

Integrated circuits

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