3T2M bidirectional memristor change circuit

Hongyu Wang; Lei Li; Zheming Yang; Nuo Wang; Yulong Chen

doi:10.1117/12.2673330

13 April 2023 3T2M bidirectional memristor change circuit

Hongyu Wang, Lei Li, Zheming Yang, Nuo Wang, Yulong Chen

Proceedings Volume 12605, 2022 2nd Conference on High Performance Computing and Communication Engineering (HPCCE 2022); 126051O (2023) https://doi.org/10.1117/12.2673330
Event: Second Conference on High Performance Computing and Communication Engineering, 2022, Harbin, China

Abstract

In most memristor circuits, a dual voltage is used to adjust the memristor value. This paper proposes a memristor change circuit in which only positive voltage changes the memristor value. A bidirectional change circuit of memristor resistance value composed of three transistors and two memristors is proposed, and a mathematical calculation method for approximate analysis of memristor changes is used. The dual synapse function can be realized by using the circuit and can be directly controlled by digital logic signals, which greatly reduces the number of devices and provides convenience for the integration of neural synapses.

Citation Download Citation

Hongyu Wang, Lei Li, Zheming Yang, Nuo Wang, and Yulong Chen "3T2M bidirectional memristor change circuit", Proc. SPIE 12605, 2022 2nd Conference on High Performance Computing and Communication Engineering (HPCCE 2022), 126051O (13 April 2023); https://doi.org/10.1117/12.2673330

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