EUV impact on silicon and carbon etching versus deposition

E. Kurganova; G. Milinkovic; I. Bolk; R. van Lent; M. van de Kerkhof

doi:10.1117/12.2665932

6 June 2023 EUV impact on silicon and carbon etching versus deposition

E. Kurganova, G. Milinkovic, I. Bolk, R. van Lent, M. van de Kerkhof

Proceedings Volume 12578, Optics Damage and Materials Processing by EUV/X-ray Radiation (XDam8); 125780E (2023) https://doi.org/10.1117/12.2665932
Event: SPIE Optics + Optoelectronics, 2023, Prague, Czech Republic

Abstract

In this contribution we share results of our experimental investigations on the role of EUV on carbon and silicon deposition in hydrogen environment. In our experiments we found no signs of EUV induced deposition of silicon. Moreover we show that it is possible to increase the rate of EUV induced deposition of carbon with respect to that of silicon. This could possibly be used to mitigate silicon growth on optical surfaces.

Citation Download Citation

E. Kurganova, G. Milinkovic, I. Bolk, R. van Lent, and M. van de Kerkhof "EUV impact on silicon and carbon etching versus deposition", Proc. SPIE 12578, Optics Damage and Materials Processing by EUV/X-ray Radiation (XDam8), 125780E (6 June 2023); https://doi.org/10.1117/12.2665932

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