In this work, we propose a plasmonic absorber structure based on planar thin films metal-dielectric layers, and PCMs (Phase Change Materials) in the infrared spectrum, between 1000-2200 nm, which has high optical contrast in these regions, thus favoring its use. The transition effects between the intermediate to amorphous and crystalline phases of the PCMs layers are analyzed, based on the Lorentz-Lorenz relation. Absorption effects can be controlled using functions in which geometric parameters and crystallization levels can be related. The results presented show high absorption above 95% in both phases of the material, in normal incidence. We also analyzed the structure in oblique incidence in the TE and TM polarization modes. These structures are eligible for next-generation reconfigurable control devices.
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