Investigation of recombination mechanisms in GaAsSb photodiodes using minority carrier lifetime measurements

Amber M. Arquitola; Neha Nooman; Seunghyun Lee; Hyemin Jung; Sanjay Krishna

doi:10.1117/12.2663859

13 June 2023 Investigation of recombination mechanisms in GaAsSb photodiodes using minority carrier lifetime measurements

Amber M. Arquitola, Neha Nooman, Seunghyun Lee, Hyemin Jung, Sanjay Krishna

Author Affiliations +

Proceedings Volume 12534, Infrared Technology and Applications XLIX; 125341Z (2023) https://doi.org/10.1117/12.2663859
Event: SPIE Defense + Commercial Sensing, 2023, Orlando, Florida, United States

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Abstract

We investigate the origin of dark current by studying the bulk and surface recombination mechanisms using temperaturedependent minority carrier lifetime measurements of GaAsSb p-i-n devices. We measure the equilibrium carrier concentration (background doping concentration) by transient microwave reflectance and compare with capacitancevoltage measurements. Room temperature minority carrier lifetime results are presented, as well as initial low temperature measurements.

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Amber M. Arquitola, Neha Nooman, Seunghyun Lee, Hyemin Jung, and Sanjay Krishna "Investigation of recombination mechanisms in GaAsSb photodiodes using minority carrier lifetime measurements", Proc. SPIE 12534, Infrared Technology and Applications XLIX, 125341Z (13 June 2023); https://doi.org/10.1117/12.2663859

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