Van der Waals semiconductor InSe fibers for high-speed photodetecting applications

Litao Xin; Xin Lu; Zhaochen Cheng; Huiyu He; Yubin Hou; Xin Zhang; Shengli Pan; Yuhao Chen; Pu Wang

doi:10.1117/12.2656616

16 December 2022 Van der Waals semiconductor InSe fibers for high-speed photodetecting applications

Litao Xin, Xin Lu, Zhaochen Cheng, Huiyu He, Yubin Hou, Xin Zhang, Shengli Pan, Yuhao Chen, Pu Wang

Proceedings Volume 12501, Seventeenth National Conference on Laser Technology and Optoelectronics; 125011C (2022) https://doi.org/10.1117/12.2656616
Event: Seventeenth National Conference on Laser Technology and Optoelectronics, 2022, Shanghai, China

Abstract

Due to the strong light–matter interactions, van der Waals semiconducting materials have shown their great potential in the development of high-performance photodetectors. However, the van der Waals semiconducting devices via conventional growth method often introduce defects or are in the form of isolated flakes, which hinders the optoelectronics from widespread applications. In this paper, van der Waals semiconductor indium selenide (InSe) fibers for photodetection were developed based on thermal drawing. Meters level length of InSe fibers have been fabricated through thermal drawing, and the problem of easy cracking of InSe is solved. The InSe fibers have high crystallinity, and it is found that the cleavage planes have a preferential orientation. The InSe fibers show a high-speed response to modulated 639 nm laser irradiation with up to 10 kHz repetition rate. In addition, the photoelectric response of the fibers were further improved through annealing by CO₂ laser.

Citation Download Citation

Litao Xin, Xin Lu, Zhaochen Cheng, Huiyu He, Yubin Hou, Xin Zhang, Shengli Pan, Yuhao Chen, and Pu Wang "Van der Waals semiconductor InSe fibers for high-speed photodetecting applications", Proc. SPIE 12501, Seventeenth National Conference on Laser Technology and Optoelectronics, 125011C (16 December 2022); https://doi.org/10.1117/12.2656616

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