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We have evaluated two types of high aspect ratio (HAR) structures of semiconductor memory devices by adopting small-angle x-ray scattering in transmission geometry (T-SAXS). One is the thin TiN thickness on the sidewall of 1.4 μm deep holes. The results indicate that T-SAXS is capable of determining sidewall thickness profiles with sub-nanometer accuracy. The other is the precise three-dimensional shape of 4.2 μm deep holes. The results show that the shape of the hole cross-section parallel to the sample surface changes drastically in the depth direction. These evaluation results of the two structures are consistent with that of transmission electron microscope, respectively.
R. Suenaga,Y. Ito,T. Goto, andK. Omote
"Precise 3D profile measurement of high aspect ratio device patterns by small-angle x-ray scattering", Proc. SPIE 12496, Metrology, Inspection, and Process Control XXXVII, 124962A (27 April 2023); https://doi.org/10.1117/12.2657063
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R. Suenaga, Y. Ito, T. Goto, K. Omote, "Precise 3D profile measurement of high aspect ratio device patterns by small-angle x-ray scattering," Proc. SPIE 12496, Metrology, Inspection, and Process Control XXXVII, 124962A (27 April 2023); https://doi.org/10.1117/12.2657063