Advantages of replacing conventional transistors with gallium nitride transistors in power devices of electric vehicle

Fotescu Radu-Petru; Burciu Loredana-Maria; Constantinescu Rodica-Claudia; Bogdan Alexandrescu

doi:10.1117/12.2643007

2 March 2023 Advantages of replacing conventional transistors with gallium nitride transistors in power devices of electric vehicle

Fotescu Radu-Petru, Burciu Loredana-Maria, Constantinescu Rodica-Claudia, Bogdan Alexandrescu

Author Affiliations +

Proceedings Volume 12493, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies XI; 124932L (2023) https://doi.org/10.1117/12.2643007
Event: Advanced Topics in Optoelectronics, Microelectronics and Nanotechnologies 2022, 2022, Constanta, Romania

Abstract

At present, gallium nitride semiconductor components have gained a lot of ground compared to conventional semiconductor components. This was possible by providing increased performance compared to classic silicon-based components. Following research, this paper reports on the advantages of GaN transistors in electric vehicles over conventional transistors currently in use. As a conclusion of this work, by replacing the classic silicon-based components with gallium nitride, a much better efficiency is obtained in the systems encountered on electric vehicles.

Citation Download Citation

Fotescu Radu-Petru, Burciu Loredana-Maria, Constantinescu Rodica-Claudia, and Bogdan Alexandrescu "Advantages of replacing conventional transistors with gallium nitride transistors in power devices of electric vehicle", Proc. SPIE 12493, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies XI, 124932L (2 March 2023); https://doi.org/10.1117/12.2643007

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