Paper
8 December 2022 Investigation of GaAlAs photocathode with nanostructures sensitive to narrow band 532 nm wavelength
Shiman Li, Yijun Zhang, Feng Shi, Gangcheng Jiao, Xin Guo, Ziheng Wang, Kaimin Zhang
Author Affiliations +
Abstract
The underwater photoelectric detection equipment mainly uses 532 nm laser as the light source, and GaAlAs with Al component of 0.63 can obtain the cutoff wavelength near 532 nm, which is an excellent photocathode material to meet the requirement of narrow band spectral response of 532 nm laser. Furthermore, the light absorptance of the cathode can be improved effectively by the quadrangular prism or cylinder nanostructured arrays prepared on the reflection-mode Ga0.37Al0.63As cathode surface, and the maximum light absorptance can reach 96.2% at 532 nm, when the cylinder nanostructured array with a height of 900 nm and a base width of 100 nm. Nevertheless, the Ga0.37Al0.63As cathode with the quadrangular prism nanostructured array is less influenced by the incident angle of light.
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shiman Li, Yijun Zhang, Feng Shi, Gangcheng Jiao, Xin Guo, Ziheng Wang, and Kaimin Zhang "Investigation of GaAlAs photocathode with nanostructures sensitive to narrow band 532 nm wavelength", Proc. SPIE 12479, Optical Manipulation and Structured Materials Conference (OMC 2022), 1247902 (8 December 2022); https://doi.org/10.1117/12.2657474
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KEYWORDS
Nanostructures

Prisms

Gallium

Absorption

Aluminum

Light sources

Finite-difference time-domain method

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