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We investigate the characteristics of the quaternary alloy InxGa1−xAsySb1−y as a viable alternative to extended InGaAs for sensing in short wavelength infrared. InxGa1−xAsySb1−yp-i-n photodetectors with 0 < x < 0.3 have been grown on GaSb substrates in the wavelength region between 1 - 3 µm. Absorption coefficient up to ∼ 104 cm−1 compares well with that of InGaAs, increasing for samples with narrower bandgaps. Capacitance measurements shed light on the intrinsic unintentional doping levels, which are up to an order of magnitude lower than in typical bulk GaSb, due to a reduction in native defects of the material. Current density initially decreases with addition of small fractions of In/As to GaSb, then proceeds to increase once again towards higher alloy fractions as the bandgap narrows.
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Katarina Mamic, Andrew Bainbridge, Laura A. Hanks, Adam P. Craig, Andrew R. J. Marshall, "InGaAsSb for cut-off tuned SWIR detectors," Proc. SPIE 12430, Quantum Sensing and Nano Electronics and Photonics XIX, 124300O (15 March 2023); https://doi.org/10.1117/12.2650772