Presentation + Paper
16 March 2023 Ultrawide bandgap Ga2O3 technologies: benefits of heterogenous integration
Abhishek Mishra, Arpit Nandi, Indraneel Sanyal, Zeina Abdallah, James W. Pomeroy, Martin Kuball
Author Affiliations +
Proceedings Volume 12422, Oxide-based Materials and Devices XIV; 1242206 (2023) https://doi.org/10.1117/12.2662307
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
We discuss the potential of heterogenous integration of Ga2O3 with diamond for enabling energy-efficient kV-class power devices. The integration alleviates Ga2O3 material drawbacks such as its low thermal conductivity and inefficient hole conductivity. The benefits of heterogeneous integration are demonstrated through electrical and thermal simulations of a Ga2O3-Al2O3-diamond superjunction based Schottky barrier diode. The simulation studies show that the novel device has potential to break the RON-breakdown voltage limit of Ga2O3, while showing relatively low rise in temperature compared to conventional devices. First steps for the actual materials integration are taken with the epitaxial growth of Ga2O3 on single crystal diamond substrates.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Abhishek Mishra, Arpit Nandi, Indraneel Sanyal, Zeina Abdallah, James W. Pomeroy, and Martin Kuball "Ultrawide bandgap Ga2O3 technologies: benefits of heterogenous integration", Proc. SPIE 12422, Oxide-based Materials and Devices XIV, 1242206 (16 March 2023); https://doi.org/10.1117/12.2662307
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KEYWORDS
Gallium

Diamond

Diodes

Crystals

Metalorganic chemical vapor deposition

Simulations

Doping

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