Effects of transistor geometry on CCD output sensitivity

H. E. Kim; Morley M. Blouke; Denis L. Heidtmann

doi:10.1117/12.19440

1 July 1990 Effects of transistor geometry on CCD output sensitivity

H. E. Kim, Morley M. Blouke, Denis L. Heidtmann

Proceedings Volume 1242, Charge-Coupled Devices and Solid State Optical Sensors; (1990) https://doi.org/10.1117/12.19440
Event: Electronic Imaging: Advanced Devices and Systems, 1990, Santa Clara, CA, United States

Abstract

This paper discusses recent progress in the understanding of the fabrication of low noise floating diffusion output amplifiers for special purpose charge-coupled devices. Emphasis has been given to reducing the total node capacitance and increasing the output sensitivity. Measurements of noise on experimental devices has yielded noise less than 3 electrons rms at 50 kpixel data rate.

Citation Download Citation

H. E. Kim, Morley M. Blouke, and Denis L. Heidtmann "Effects of transistor geometry on CCD output sensitivity", Proc. SPIE 1242, Charge-Coupled Devices and Solid State Optical Sensors, (1 July 1990); https://doi.org/10.1117/12.19440

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available