Presentation + Paper
10 March 2023 Time resolved infrared spectroscopy for hot carrier dynamics in InAs-AlAsSb core-shell nanowires
Author Affiliations +
Abstract
Semiconductor nanowires (NWs) have shown robust hot carrier effects due to their small dimensions. Here, we study the cooling mechanisms of hot electrons in the time domain via transient absorption spectroscopy. Probe energies below the bandgap are used to determine the evolution of the carrier effective mass while probe energies above the bandgap track the conduction band occupation. From excitation intensity dependent measurements, we confirm that electron-hole interactions are a major cooling channel at large carrier density, given the high ratio of mh/me of InAs. Our experiments indicate that this cooling channel is amplified in passivated core-shell NWs. We associate this effect with spatial carrier separation caused by Fermi-level pinning in unpassivated NWs. In core-shell NWs, bands are considerably more flat which increases radiative recombination and electron-hole scattering with the latter cooling the hot electron population. Our results highlight the advantages of carrier separation if high carrier densities are to be used for hot phonon bottlenecks.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Daniel Sandner, Hamidreza Esmaielpour, Fabio del Giudice, Matthias Nuber, Reinhard Kienberger, Gregor Koblmüller, and Hristo Iglev "Time resolved infrared spectroscopy for hot carrier dynamics in InAs-AlAsSb core-shell nanowires", Proc. SPIE 12416, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XII, 1241605 (10 March 2023); https://doi.org/10.1117/12.2648285
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KEYWORDS
Nanowires

Electrons

Indium arsenide

Picosecond phenomena

Absorption

Phonons

Hot carriers

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