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29 December 2022 Discriminating linear and nonlinear absorption of semiconductors with phase-modulated femtosecond lasers (Conference Presentation)
Chuanliang Wang, Jinyang Cai, Khadga Karki
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Proceedings Volume 12314, Optoelectronic Devices and Integration XI; 123140A (2022) https://doi.org/10.1117/12.2643769
Event: SPIE/COS Photonics Asia, 2022, Online Only
Abstract
Defect distribution and their contribution to photocurrent is imaged in commercially available GaP, GaAsP and GaN using phase modulated multi-photon microspectroscopy. Results show that contributions from defects dominate the photocurrent from GaAsP and GaN. In GaP, such contributions are substantially less. Fabrication process of GaAsP and GaN could be optimized to improve their functionality as photodiodes. The method we have implemented can be used as an ‘in-operando’ characterization tool for understanding the underlying processes that contribute to the external signals in semiconductor devices.
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Chuanliang Wang, Jinyang Cai, and Khadga Karki "Discriminating linear and nonlinear absorption of semiconductors with phase-modulated femtosecond lasers (Conference Presentation)", Proc. SPIE 12314, Optoelectronic Devices and Integration XI, 123140A (29 December 2022); https://doi.org/10.1117/12.2643769
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KEYWORDS
Semiconductor lasers
Absorption
Semiconductors
Gallium nitride
Modulation
Photons
Light emitting diodes
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