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The pattern size of semiconductor circuits has been shrunk as technical advances continued. Defect control becomes tighter due to a decrease in defect size that affects the image printed on the wafer. It is critical to the photomask which contained a considerably shrunk circuit and ultra-high density pattern for sub – 20 nm tech devices. In this paper we group two types of rare process defects that think come in vacuum chamber contamination here we also present hypothesis defects mechanism and possible solution.
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Yuan Hsu, Will Hsiao, Cy Huang, Leo Lo, Michael Morgan, Yukihide Kajimoto, "A study of rare contamination defects come in a vacuum chamber," Proc. SPIE 12293, Photomask Technology 2022, 122930T (1 December 2022); https://doi.org/10.1117/12.2627280