One-transistor memory element

A. R. Poghosyan; R. K. Hovsepyan; N. R. Aghamalyan; Y. A. Kafadaryan; H. L. Ayvazyan; H. G. Mnatsakanyan

doi:10.1117/12.2632105

3 October 2022 One-transistor memory element

A. R. Poghosyan, R. K. Hovsepyan, N. R. Aghamalyan, Y. A. Kafadaryan, H. L. Ayvazyan, H. G. Mnatsakanyan

Proceedings Volume 12229, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications XVI; 122290B (2022) https://doi.org/10.1117/12.2632105
Event: SPIE Optical Engineering + Applications, 2022, San Diego, California, United States

Conference Poster

Abstract

There is great interest in materials for one-transistor capacitive memory elements (1T1C DRAM) based on a non-junction gate FET with high memory density. ZnO film is an interesting material for creating such memory, since dielectric properties of ZnO can be controlled by donor or acceptor impurity. The goal of this study is the investigations of the dielectric properties and mechanisms of charge carrier transport of ZnO and ZnO:Li films in wide frequency and temperature range to demonstrate the possibility of creating a memory element that combines a capacitor and a field-effect transistor. ZnO:Li dielectric layer can be used as channel of the FET and dielectric for capacitor. Proposed DRAM have good potential for memory applications because it has a high reading speed; the ratio of currents in states "1" and "0" is about 105 , and the holding time exceeds 10 ms.

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A. R. Poghosyan, R. K. Hovsepyan, N. R. Aghamalyan, Y. A. Kafadaryan, H. L. Ayvazyan, and H. G. Mnatsakanyan "One-transistor memory element", Proc. SPIE 12229, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications XVI, 122290B (3 October 2022); https://doi.org/10.1117/12.2632105

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