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Efficiency limiting factors of quantum dots light-emitting diodes (QLEDs) are studied by a machine learning approach using features taken from published data. Prototypical structure of Cd-based QLEDs is transparent conductive oxide (TCO)/hole transport layer (HTL)/quantum dots (QDs)/electron transport layer (ETL)/Al, fabricated by printing processes. The most important factor is the hole injection barrier from HTL to QD layer (about 1 eV in CdSe QLEDs). A mechanism of the hole injection in such QLEDs is discussed using device simulation, and the experimental results that support the mechanism are shown. In addition, other efficiency limiting factors - the electron mobility of HTL and carrier balance in QD layer - are experimentally shown.
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