Presentation + Paper
29 August 2022 Performance of a kilo-pixel RNDR-DEPFET detector
W. Treberspurg, A. Bähr, H. Kluck, P. Lechner, J. Ninkovic, J. Treis, H. Shi, J. Schieck
Author Affiliations +
Abstract
The combined storage and amplifier structure of a Depleted P-channel Field-Effect Transistor provides the capability to collect, store and read out charge carriers. In combination with an efficient charge transfer between two storage regions, this enables a statistically independent repetitive non-destructive readout of active pixels integrated on a fully depleted, high purity silicon bulk. Averaging the repetitions allows for deep sub-electron noise levels. After the working principle of those sensors was demonstrated on single pixel devices, a 64×64 pixel detector has been operated for the first time. The sensor achieved a single electron sensitivity by recording the spectrum of a light emitting diode. A mean sub-electron noise below 0.2 eENC at a readout time below 230 ms/frame are demonstrated.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. Treberspurg, A. Bähr, H. Kluck, P. Lechner, J. Ninkovic, J. Treis, H. Shi, and J. Schieck "Performance of a kilo-pixel RNDR-DEPFET detector", Proc. SPIE 12191, X-Ray, Optical, and Infrared Detectors for Astronomy X, 1219119 (29 August 2022); https://doi.org/10.1117/12.2629248
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KEYWORDS
Sensors

Calibration

Field effect transistors

Silicon

Transistors

X-rays

Spectroscopy

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