A new high-voltage diode structure with backside double injection holes (BDIH)

Lihao Wang; Xintian Zhou; Feng Liu; Lei Zhang

doi:10.1117/12.2634686

4 May 2022 A new high-voltage diode structure with backside double injection holes (BDIH)

Lihao Wang, Xintian Zhou, Feng Liu, Lei Zhang

Proceedings Volume 12172, International Conference on Electronic Information Engineering and Computer Communication (EIECC 2021); 1217228 (2022) https://doi.org/10.1117/12.2634686
Event: International Conference on Electronic Information Engineering and Computer Communication (EIECC 2021), 2021, Nanchang, China

Abstract

A 3.3-kV silicon power diode with backside double injection holes is presented in this paper, which has been studied according to TCAD simulations. By setting the backside p-regions on the cathode side of the active area and setting the inside n+ layer in the backside p-regions, that is, the combination of P+N-P+N+ structure, P+N-P+ structure and P+N-N+ structure is set from the anode to the cathode. This new diode structure combines the advantages of the RFC diode and the CIBH diode, which could greatly improve the over-current turn-off ruggedness and soft reverse recovery characteristics at low current densities.

Citation Download Citation

Lihao Wang, Xintian Zhou, Feng Liu, and Lei Zhang "A new high-voltage diode structure with backside double injection holes (BDIH)", Proc. SPIE 12172, International Conference on Electronic Information Engineering and Computer Communication (EIECC 2021), 1217228 (4 May 2022); https://doi.org/10.1117/12.2634686

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