X-ray stress measurement of SiC single-crystal induced by laser ablation

Ya Deng; Yufeng Zhou; Yumin Zhang

doi:10.1117/12.2625806

27 March 2022 X-ray stress measurement of SiC single-crystal induced by laser ablation

Ya Deng, Yufeng Zhou, Yumin Zhang

Proceedings Volume 12169, Eighth Symposium on Novel Photoelectronic Detection Technology and Applications; 12169A2 (2022) https://doi.org/10.1117/12.2625806
Event: Eighth Symposium on Novel Photoelectronic Detection Technology and Applications, 2021, Kunming, China

Abstract

The residual stress distribution induced by nanosecond UV laser irradiation on the surface of SiC single crystal was detected through X-ray stress measurement method in this manuscript. In order to explain the generation mechanism of the residual stresses, the surface morphology of the laser ablation zone was characterized by laser scanning confocal microscopy. Besides, the material compositions of the ablation zone were also observed by using energy dispersive X-ray spectrometer. The measurement results indicated that tensile stress distribution existed around the laser-irradiated zone, while the center position of the laser spot had the smaller residual stresses. There were obvious bulges at the ablation zone margin, which may be caused by the melting of the material and the splashing and re-solidification of molten material in the ablation hole. In addition, there exists oxidation phenomenon in the irradiated region by comparing the EDS results of laser irradiated and unirradiated regions. This suggested that the temperature reached its melting point and photothermal ablation occurred when laser irradiated on the surface of the silicon carbide specimen. Therefore, it can be concluded that the existence of residual stresses was related to the local thermal expansion caused by laser irradiation. And the residual stresses at the marginal zone had the larger tensile stresses because of the transverse extrusion effect.

Citation Download Citation

Ya Deng, Yufeng Zhou, and Yumin Zhang "X-ray stress measurement of SiC single-crystal induced by laser ablation", Proc. SPIE 12169, Eighth Symposium on Novel Photoelectronic Detection Technology and Applications, 12169A2 (27 March 2022); https://doi.org/10.1117/12.2625806

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
6 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Laser ablation

Silicon carbide

X-rays

Crystals

Laser irradiation

Diffraction

Laser crystals

Show All Keywords

Keywords/Phrases

Search In:

Publication Years