Reactive ion etching of Ta2O5/SiO2 mixed films using CHF3 and Ar

Junhui Die; Zhao Qiao; Fumin Qiu; Yunti Pu; Liang Lv; Bingcheng Xiong; Ping Ma; Mingxiao Zhang

doi:10.1117/12.2624921

27 March 2022 Reactive ion etching of Ta₂O₅/SiO₂ mixed films using CHF₃ and Ar

Junhui Die, Zhao Qiao, Fumin Qiu, Yunti Pu, Liang Lv, Bingcheng Xiong, Ping Ma, Mingxiao Zhang

Proceedings Volume 12169, Eighth Symposium on Novel Photoelectronic Detection Technology and Applications; 1216971 (2022) https://doi.org/10.1117/12.2624921
Event: Eighth Symposium on Novel Photoelectronic Detection Technology and Applications, 2021, Kunming, China

Abstract

Ta₂O₅/SiO₂ mixed film is a very promising material for the preparation of new optical and optoelectronic devices, but there are few reports on its etching characteristics. In this paper, Ta₂O₅/SiO₂ mixed films with various proportions of Ta₂O₅ were prepared by ion-beam sputtering deposition. CHF₃-based reactive ion etching (RIE) was used to etch Ta₂O₅/SiO₂ mixed films. The etching profiles of Ta₂O₅/SiO₂ mixed films were observed by using a field-emission scanning electron microscope (SEM). The RIE etch rates were investigated as a function of the Ta₂O₅/SiO₂ mixture ratio, RIE power, chamber pressure and etching gas ratio. It is found that the etch rate of Ta₂O₅/SiO₂ mixed films increase with an increase of RIE power and chamber pressure, and decrease with an increase of Ta₂O₅ composition in the Ta₂O₅/SiO₂ mixed films. Moreover, it is also found that as the proportion of F-based gas increases, the etching rate of the Ta₂O₅/SiO₂ mixed film first increases and then saturates. These results would be of importance for the fabrication of optical and optoelectronic devices based on Ta₂O₅/SiO₂ mixed films.

Citation Download Citation

Junhui Die, Zhao Qiao, Fumin Qiu, Yunti Pu, Liang Lv, Bingcheng Xiong, Ping Ma, and Mingxiao Zhang "Reactive ion etching of Ta₂O₅/SiO₂ mixed films using CHF₃ and Ar", Proc. SPIE 12169, Eighth Symposium on Novel Photoelectronic Detection Technology and Applications, 1216971 (27 March 2022); https://doi.org/10.1117/12.2624921

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KEYWORDS

Etching

Tantalum

Reactive ion etching

Argon

Scanning electron microscopy

Ions

Chromium

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